SWIR Lens UN-GSWIR1614C

For Security Surveillance, Vehicle & Drone Obstacle Avoidance, Semiconductor Wafer Inspection, etc.

· Developed for 1" image format

· Large Aperture, up to F1.4

· Compact and lightweight design

For Vision-Guided Positioning Systems, Semiconductor Defect Inspection, Agricultural Remote Sensing Imaging, Hyperspectral Camera, etc.

· Developed for 1" image format
· Wavelength: 900-1700nm
· Large Aperture, up to F1.4
· Compact and lightweight design

For Semiconductor Wafer Inspection, Wildfire Detection & Ember Monitoring, etc.

· Developed for 1" image format
· Wavelength: 900-1700nm
· Large Aperture, up to F1.4
· Compact and lightweight design

For Semiconductor Wafer Inspection, Biomedical Imaging, Logistics Package Sorting, Wildfire Detection & Ember Monitoring, etc.

· Developed for 1.1" image format
· Wavelength: 800-1700nm
· Large Aperture, up to F2.0
· Compact and lightweight design

For Photovoltaic Inspection, Pill / Capsule Detection, Print Inspection, Hyperspectral Camera, etc.

· Developed for 1" image format
· Wavelength: 900-1700nm
· Large Aperture, up to F1.4
· Compact and lightweight design

For lithium battery electrode, copper foil and ceramic separator inspection, PCB & single-layer FPC AOI detection, silicon wafer routine sorting, food packaging & label printing quality control and electronic ceramic substrate inspection.

· Covering a wide working distance range

· Lockable distance and aperture settings

Product information: Custom designs are available upon request.

1. Silicon (Si) 

Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some oxygen that causes an absorption band at 9 microns.To avoid this, material can be prepared by a Float-Zone (FZ) process. Optical silicon is generally lightly doped (5 to 40 ohm cm) for best transmission above 10 microns, and doping is usually boron (P-type) and phosphorus (N-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.
 
CZ Silicon is commonly used as substrate material for infrared reflectors and windows in the 1.5-8 micron region. The strong absorption band at 9 microns makes it unsuitable for CO2 laser transmission applications, but it is frequently used for laser mirrors because of its high thermal conductivity and low density. Application as window, lens in the 1.5 - 8 um region; Mirror for CO2 laser and spectrometer applications.
 

ZnS MultiSpectral Under intense heat and pressure, defects within the crystalline lattice are virtually eliminated, leaving a water-clear material with minimal scatter and high transmission characteristics from 0.4 to 12 microns. This material is particularly well suited for high-performance common aperture systems that must perform across a broad wavelength spectrum.

Specifications:

Material: ZnS MultiSpectral
Diameter Tolerance: --------------------- +0.0, -0.1mm
Thickness Tolerance: -------------------- ±0.1mm
Clear Aperture: ---------------------------->85%
Parallelism: -----------------------------------3 arc minute
Surface Quality: ----------------------------80-50 scratch and dig
Wavefront Distortion: -------------------- λ /2 per 25mm @633mm
Bevel: -----------------------------------------Protective  (<0.2mm x 45° )
Coating: -------------------------------------- Optional （Uncoated, AR Coating, etc.）

3. ZnSe material

ZnSe is a preferred material for lenses, windows, output couplers and beam expanders for its low absorptivity at infrared wavelengths and its visible transmission. For high-power applications, it’s critical that the material bulk absorption and internal defect structure be carefully controlled, that minimum-damage polishing technology be employed, and the highest quality optical thin-film coatings are used. The material absorption is verified by CO2 laser vacuum calorimetry. Our quality assurance department provides testing and specific optics certification on request.

ZnSe is non-hygroscopic and chemically stable, unless treated with strong acids. It’s safe to use in most industrial field, and laboratory environments.

For high-end PCB AOI inspection, Mini/Micro LED panel micro-defect detection, photovoltaic silicon wafer EL hidden crack inspection, narrow precision metal strip flaw detection, luxury printing anti-counterfeit texture inspection, electronic ceramic substrate microscopic inspection and high-precision linear dimension measurement of tiny electronic components.

· Developed for 66mm big frame sensor
· Low distortion
· Compatible for 16K line scan camera
· Excellent optical performance, uniform imaging of center and edge

Product information: Custom designs are available upon request.